JFET 55V 25mA
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| Transistor Polarity : | N-Channel | Gate-Source Breakdown Voltage : | - 40 V | ||
| Configuration : | Single | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOT-23 | Packaging : | Can |
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10mA
Storage Temperature Range . . . . . . . . . . . . .-65 to +200
Operating Temperature Range . . . . . . . . . . . -55 to +200
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . .+300
TO-18 TO-92 SOT-23
Power Dissipation 1.8W 360mW 350mW
Derate above 2510mW/ 3.3mW/2.8mW/
Plastic
Storage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150
Operating . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +135
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.