Features: • SST49LF004B: 512K x8 (4 Mbit)• Conforms to Intel LPC Interface Specification 1.1 Supports Single-Byte LPC Memory and Firmware Memory Cycle Types• Flexible Erase Capability Uniform 4 KByte sectors Uniform 64 KByte overlay blocks Chip-Erase for PP Mode Only• S...
SST49LF004B: Features: • SST49LF004B: 512K x8 (4 Mbit)• Conforms to Intel LPC Interface Specification 1.1 Supports Single-Byte LPC Memory and Firmware Memory Cycle Types• Flexible Erase Capabi...
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The SST49LF004B flash memory device is designed to interface with host controllers (chipsets) that support a lowpin- count (LPC) interface for BIOS applications. The SST49LF004B device complies with Intel's LPC Interface Specification 1.1, supporting single-byte Firmware Memory and LPC Memory cycle types.
The SST49LF004B is backward compatible to the SST49LF00xA Firmware Hub and the SST49LF0x0A LPC Flash. In this document, FWH mode in the SST49LF00xA specification is referenced as the Firmware Memory Read/ Write cycle and LPC mode in the SST49LF0x0A specification is referenced as the LPC Memory Read/Write cycle. Two interface modes are supported by the SST49LF004B: LPC mode (Firmware Memory and LPC Memory cycle types) for in-system operations and Parallel Programming (PP) mode to interface with programming equipment.
The SST49LF004B flash memory device is manufactured with SST's proprietary, high-performance SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain greater reliability and manufacturability compared with alternative approaches. The SST49LF004B device significantly improves performance and reliability, while lowering power consumption. The SST49LF004B device writes (Program or Erase) with a single 3.0-3.6V power supply.
The SST49LF004B provides a maximum Byte-Program time of 20 µsec. The entire memory can be erased and programmed byte-by-byte in 8 seconds when using status detection features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent writes, the SST49LF004B device has on-chip hardware and software write protection schemes. It is offered with a typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.
The SST49LF004B uses less energy during Erase and Program than alternative flash memory technologies. The total energy consumed is a function of the applied voltage, current and time of application. Since for any given voltage range the SuperFlash technology uses less current to pro-