Features: · High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS· Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical · Low Noise · Surface Mount PackageApplication· Differential Wideband Amplifier · VHF/UHF Amplifiers · Test and MeasurementPi...
SST5912: Features: · High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS· Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical · Low Noise · Surface Mou...
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| Parameter/Test Condition |
Symbol |
Limit |
Unit |
| Gate-Drain Voltage Gate-Source Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) |
VGD VGS IG PD TJ Tstg TL |
-25 -25 50 300 500 2.4 4 -55 to 150 -65 to 150 300 |
V V mA mW mW mW/ °C mW/ °C °C °C °C |
The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain (typically > 6000 mmhos), low leakage ( < 1pA typically) and low noise, The SST5912 is an excellent choice for differential wideband amplifiers, VHF/UHF amplifiers and test and measurement.