Features: • Fast Switching Speed : 3nsec• HIgh LInearity : +47dBm IP3• Ultra Low DC Power Consumption• Low Insertion Loss : 0.7dB at 1GHz• Low Cost Small Outline Plastic PackageApplication• Digital Cellular• Spread SpectrumSpecifications RF Input Powe...
SSW-308: Features: • Fast Switching Speed : 3nsec• HIgh LInearity : +47dBm IP3• Ultra Low DC Power Consumption• Low Insertion Loss : 0.7dB at 1GHz• Low Cost Small Outline Plasti...
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| RF Input Power | 2W Max > 500MHz |
| Control Voltage | -10V |
| OperatingTemperature | -45C to + 85C |
| StorageTemperature | -65C to + 150C |
| Thermal Resistane | 20 deg C/W |
Stanford Microdevices' SSW-308 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package.
This single-pole, double-throw, reflective switch SSW-308 consumes less than 40uA and operates with 0V/-5V control voltages. This switch can be used in both analog and digital wireless communication systems including AMPS, PCS, DECT, and GSM.
Typical output power at 1dB compression is +28dBm. 1dB output power over 1 watt may be achieved with higher control voltages.
The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability.