SSW-408

Features: • High Compression Point : up to 4 Watts• HIgh Linearity : TOIP +55dBm @2GHz• Low DC Power Consumption• Low Insertion Loss : 1.2dB at 2GHz• Operates from Positive or Negative 3V to 8V Supplies• Low Cost Small Outline Plastic PackageApplication• A...

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SSW-408 Picture
SeekIC No. : 004506123 Detail

SSW-408: Features: • High Compression Point : up to 4 Watts• HIgh Linearity : TOIP +55dBm @2GHz• Low DC Power Consumption• Low Insertion Loss : 1.2dB at 2GHz• Operates from Posi...

floor Price/Ceiling Price

Part Number:
SSW-408
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

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Upload time: 2025/12/23

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Product Details

Description



Features:

• High Compression Point : up to 4 Watts
• HIgh Linearity : TOIP +55dBm @2GHz
• Low DC Power Consumption
• Low Insertion Loss : 1.2dB at 2GHz
• Operates from Positive or Negative 3V to 8V Supplies
• Low Cost Small Outline Plastic Package



Application

• Analog/Digital Wireless Communications
• Spread Spectrum
• AMPS, PCS, DECT, IS-95, IS-136, 802.11, CDPD and GSM.



Specifications

RF Input Power 6W Max > 500MHz
Device/Control Voltage -8V or +8V
OperatingTemperature -45C to + 85C
StorageTemperature -65C to + 150C
Thermal Resistane 20 deg C/W



Description

Stanford Microdevices' SSW-408 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface mountable small outline plastic package.

This single-pole, double-throw reflective switch SSW-408 consumes less than 50uA and can operate with positive or negative 3V to 8V supply voltages, making it suitable for use in both infrastructure and subscriber equipment. This switch can be used in all analog and digital wireless communication systems including (but not limited to) AMPS, PCS, DECT, IS-95, IS-136, 802.11, CDPD and GSM.

At +5V or 5V bias, typical output power at 1dB compression is 3 watts. 1dB output power over 4 watts and IP3 over +55dBm may be achieved with higher control voltages.




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