Position: Home  > All Categories> Integrated Circuits (ICs) > SSW4N60B

SSW4N60B

Features: • 4.0A, 600V, R DS(on) = 2.5Ω @VGS = 10 V• Low gate charge ( typical 22 nC)• Low Crss ( typical 14 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter SSW4N60B / SSI4N60B Units VDSS Dra...

product image

SSW4N60B Picture
See larger image
SeekIC No. : 004506125 Detail

SSW4N60B: Features: • 4.0A, 600V, R DS(on) = 2.5Ω @VGS = 10 V• Low gate charge ( typical 22 nC)• Low Crss ( typical 14 pF)• Fast switching• 100% avalanche tested• Imp...

SSW4N60B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SSW4N60B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 4.0A, 600V, R DS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter SSW4N60B / SSI4N60B Units
VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)		 4.0 A
2.5 A
IDM Drain Current - Pulsed (Note 1) 16 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 240 mJ
IAR Avalanche Current (Note 1) 4.0 A
EAR Repetitive Avalanche Energy (Note 1) 10 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25°C)
 3.13 W
Power Dissipation (TC = 25°C)
               - Derate above 25°C		 100 W
0.8 W/°C
TJ, TSTG Operating and
Storage Temperature Range		 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C



Description

These N-Channel enhancement mode power field effect transistors SSW4N60B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These SSW4N60B are well suited for high efficiency switch mode power supplies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Tapes, Adhesives
803
AC452-2
Transformers
TM-09210
BV222-1-00992
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more