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SSW60A

Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 25 A (Max.) @ VDS = 600V`Low RDS(ON) : 9.390 (Typ.) Specifications Symbol Characteristic Value Units VDSS D...

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SeekIC No. : 004506128 Detail

SSW60A: Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 25 A (Max.) @ VDS = 600V`Low RDS...

SSW60A Data Sheet

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Part Number:
SSW60A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 25 A (Max.) @ VDS = 600V
`Low RDS(ON) : 9.390 (Typ.)

 




Specifications

Symbol
Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
600
V
ID
 Continuous Drain Current (TC=25)
1
A
Continuous Drain Current (TC=100)
0.6
A
IDM
 Drain Current-Pulsed 1
3
A
VGS
 Gate-to-Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy 2
44
mJ
IAR
 Avalanche Current 1
1
A
EAR
 Repetitive Avalanche Energy 1
3.4
mJ
dv/dt
 Peak Diode Recovery dv/dt 3
3.0
V/ns
PD
 Total Power Dissipation (TA=25)
3.1
W
Total Power Dissipation (TC=25)
Linear Derating Factor
34
0.27
W
W/
TJ,TSTG
 Operating Junction and
Storage Temperature Rang
- 55 to +150
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300
1.Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
2.L=80mH, IAS=1A, VDD=50V, RG=27 , Starting TJ =25
3.ISD 1A, di/dt 60A/ s, VDD BVDSS , Starting TJ =25



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