SSW/I4N60A

The SSW/I4N60A is designed as one kind of advanced power MOSFET with seven features:(1)avalanche rugged technology;(2)rugged gate oxide technology;(3)lower input capacitance;(4)improved gate charge;(5)extended safe operating area;(6)lower leakage current:25 uA(max.) @ Vds=600V;(7)lower Rds: 2.037(typ.).

The absolute maximum ratings of the SSW/I4N60A can be summarized as:(1)drain-to-source voltage:600 V;(2)continuous drain current(Tc=25):4 A;(3)continuous drain current(Tc=100):2.5 A;(4)drain current-pulsed:16 A;(5)gate-to-source voltage:+/- 30 V;(6)single pulse avalanche energy:262 mJ;(7)avalanche current:4 A;(8)repetitive avalanche energy:10 mJ;(9)peak diode recovery dv/dt:3.0 V/ns;(10)total power dissipation(Ta=25):3.1 W;(11)total power dissipation(Ta=25) linear derating factor:0.8;(12)operating junction and storage temperature range:-55 to 150;(13)maximum lead temp. for soldering purposes,1/8" from case for 5-seconds:300.If you want to know more information such as the electrical characteristics about this SSW/I4N60A,please download the datasheet in www.seekic.com and www.chinaicmart.com