DescriptionThe ST-1MLA is designed as one kind of high sensitivity NPN silicon phototransistor that mounted in TO-18 type header with clear epoxy encapsulation. The phototransistors have a wide angular response and relatively low-cost compared to TO-18 can type devices. Features of the ST-23G are:...
ST-1MLA: DescriptionThe ST-1MLA is designed as one kind of high sensitivity NPN silicon phototransistor that mounted in TO-18 type header with clear epoxy encapsulation. The phototransistors have a wide angu...
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The ST-1MLA is designed as one kind of high sensitivity NPN silicon phototransistor that mounted in TO-18 type header with clear epoxy encapsulation. The phototransistors have a wide angular response and relatively low-cost compared to TO-18 can type devices. Features of the ST-23G are:(1)wide angular response;(2)durable;(3)high reliability in demanding environments;(4)two leads (collector, emitter) ST-1MLA;(5)three leads (collector emitter, base) ST-1MLB. And this device can be used in infrared sensors, optical switches and optical detectors, encoders and smoke detectors applications.
The absolute maximum ratings of the ST-1MLA can be summarized as:(1)C-E voltage: 40 V;(2)E-C voltage: 4 V;(3)collector current: 30 mA;(4)collector power dissipation: 100 mW;(5)storage temperature: -25 to +90 ;(6)storage temperature: -30 to +100 ;(7)soldering temperature: 260 .
And the electrical characteristics of this device can be concluded into several points:(1)collector dark current: 1 to 200 nA;(2)light current: 0.5 to 5.0 mA;(3)C-E saturation voltage: 0.2 to 0.4 V;(4)switching speeds rise time: 8 usec;(5)switching speeds fall time: 10 usec;(6)spectral sensitivity: 500 to 1050 nm;(7)peak wavelength: 880 nm;(8)half angle: +/- 70 deg. If you want to know more information about the ST-1MLA, please download the datasheet in www.seekic.com or www.chinaicmart.com .