ST-1MLBR2

The ST-1MLBR2 is designed as one kind of high sensitivity NPN silicon phototransistor that mounted on TO-18 type metal stems with epoxy encapsulation and with visible light cut-off filters, so that the phototransistors are sensitive only to infrared rays. Features of the ST-1MLBR2 are:(1)TO-18 visible ray cut off resin potting type;(2)with the base terminal;(3)wide angular response. And this device can be used in optical switches and industrial machines and OA applications.

The absolute maximum ratings of the ST-1MLBR2 can be summarized as:(1)C-E voltage: 40 V;(2)E-C voltage: 4 V;(3)collector current: 30 mA;(4)collector power dissipation: 100 mW;(5)storage temperature: -25 to +90 ;(6)storage temperature: -30 to +100 ;(7)soldering temperature: 260 .

And the electrical characteristics of this device can be concluded into several points:(1)collector dark current: 1 to 200 nA;(2)light current: 0.5 to 5.0 mA;(3)C-E saturation voltage: 0.2 to 0.4 V;(4)switching speeds rise time: 8 usec;(5)switching speeds fall time: 10 usec;(6)spectral sensitivity: 720 to 1050 nm;(7)peak wavelength: 940 nm;(8)half angle: +/- 70 deg. If you want to know more information about the ST-1MLBR2, please download the datasheet in www.seekic.com or www.chinaicmart.com .