DescriptionThe ST-23G is designed as one kind of high sensitivity NPN silicon phototransistor that mounted in a low profile package which is both compact and easy to mount. Features of the ST-23G are:(1)side-viwering plastic package;(2)high output power;(3)general-use type. And this device can be ...
ST-23G: DescriptionThe ST-23G is designed as one kind of high sensitivity NPN silicon phototransistor that mounted in a low profile package which is both compact and easy to mount. Features of the ST-23G ar...
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The ST-23G is designed as one kind of high sensitivity NPN silicon phototransistor that mounted in a low profile package which is both compact and easy to mount. Features of the ST-23G are:(1)side-viwering plastic package;(2)high output power;(3)general-use type. And this device can be used in optical switches and photointerrupters, photoreflectors applications.
The absolute maximum ratings of the ST-23G can be summarized as:(1)C-E voltage: 30 V;(2)E-C voltage: 5 V;(3)collector current: 40 mA;(4)collector power dissipation: 100 mW;(5)storage temperature: -20 to +100 ;(6)storage temperature: -30 to +100 ;(7)soldering temperature: 260 .
And the electrical characteristics of this device ST-23G can be concluded into several points:(1)collector dark current: 1 or 100 nA;(2)light current: 0.5 to 20 mA;(3)C-E saturation voltage: 0.2 to 0.4 V;(4)switching speeds rise time: 3.2 us;(5)switching speeds: 4.8 us;(6)spectral sensitivity: 500 to 1050 nm;(7)peak wavelength: 800 nm;(8)half angle: +/- 30. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .