ST13007

Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

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ST13007 Picture
SeekIC No. : 00204853 Detail

ST13007: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

floor Price/Ceiling Price

US $ .38~.56 / Piece | Get Latest Price
Part Number:
ST13007
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.56
  • $.5
  • $.41
  • $.38
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 16 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Tube
Maximum DC Collector Current : 8 A
Package / Case : TO-220
Emitter- Base Voltage VEBO : 9 V
DC Collector/Base Gain hfe Min : 16


Features:

· IMPROVEDSPECIFICATION:
    - LOWER LEAKAGECURRENT
    - TIGHTER GAIN RANGE
    - DC CURRENT GAIN PRESELECTION
    - TIGHTER STORAGE TIME RANGE
· HIGH VOLTAGE CAPABILITY
· NPN TRANSISTOR
· LOW SPREAD OF DYNAMIC PARAMETERS
· MINIMUM LOT-TO-LOT SPREADFOR RELIABLEOPERATION
· VERY HIGH SWITCHING SPEED
· FULLY CHARACTERIZED AT 125 oC
· LARGE RBSOA



Application

·ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTING
·SWITCH MODE POWER SUPPLIES



Specifications

Symbol Parameter
Value
Uni t
VCEV

VCEO

VEBO

IC

ICM

IB

IBM

Ptot

Tstg

Tj
Collector-Emit ter Voltage (VBE = -1.5V)

Collector-Emit ter Voltage (IB = 0)

Emitter-Base Voltage (IC = 0)

Collector Current

Collector Peak Current

Base Current

Base Peak Current

Total Dissipation at Tc 3 25

Storage Temperature

Max. Operating Junction Temperature
700

400

9

8

16

4

8

36

-65 to 150

150
V

V

V

A

A

A

A

W






Description

The ST13007 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

They use a Cellular Emitter structure to enhance switching speeds.


Parameters:

Technical/Catalog InformationST13007
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)8A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic2V @ 1A, 5A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names ST13007
ST13007
497 7458 5 ND
49774585ND
497-7458-5



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