ST14C02C

Specifications

Symbol	Parameter		Value	Unit
TA	Ambient Operating Temperature		0 to 70
TSTG	Storage Temperature	Wafer form	-65 to 150
		Module form	-40 to 120
VIO	Input or Output range		-0.3 to 6.5	V
VCC	Supply Voltage		-0.3 to 6.5	V
VESD	Electrostatic Discharge Voltage (Human Body model) 2		4000	V
	Electrostatic Discharge Voltage (Machine model) 3		500	V

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to  Absolute Maximum Rating conditions forextended periods may affect device reliability. Refer also to the ST SURE Program and other relevantquality documents.

2. MIL-STD-883C, 3015.7 (100 pF, 1500 )

3. EIAJ IC-121 (Condition C) (200 pF, 0 )


Description

This ST14C02C is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics's High Endurance, Advanced
Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10
years. The memory operates with a power supply as low as 3 V.

The ST14C02C is available in wafer form (either sawn or unsawn) and in micromodule form (on film).

The memory of the ST14C02C is compatible with the I2C standard. This is a two wire serial interface that uses a bi-directional data bus and serial clock. The memory carries a built-in 7-bit unique Device Type Identifier code (1010000) in accordance with the I²C bus definition. Only one memory can be attached to each I²C bus.