ST2310DHI

Transistors Switching (Resistor Biased) NPN Hi-Volt Fast Sw

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ST2310DHI Picture
SeekIC No. : 00224391 Detail

ST2310DHI: Transistors Switching (Resistor Biased) NPN Hi-Volt Fast Sw

floor Price/Ceiling Price

Part Number:
ST2310DHI
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Mounting Style : SMD/SMT Package / Case : SOT-93-3
Collector- Emitter Voltage VCEO Max : 600 V Continuous Collector Current : 12 A
Peak DC Collector Current : 12000 mA Power Dissipation : 55 W
Maximum Operating Temperature : + 150 C Packaging : Tube    

Description

Typical Input Resistor :
Typical Resistor Ratio :
Maximum Operating Frequency :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Configuration : Single
Packaging : Tube
Continuous Collector Current : 12 A
Package / Case : SOT-93-3
Power Dissipation : 55 W
Collector- Emitter Voltage VCEO Max : 600 V
Peak DC Collector Current : 12000 mA


Features:

NEW SERIES, ENHANCED PERFORMANCE
FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING
INTEGRATED FREE WHEELING DIODE
HIGH VOLTAGE CAPABILITY  (> 1500 V)
HIGH SWITCHING SPEED
TIGTHER hfe CONTROL
IMPROVED RUGGEDNESS




Application

HORIZONTAL DEFLECTION HIGH END TVS


Specifications

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
1500
V
VCEO
Collector-Emitter Voltage (IB = 0)
600
V
VEBO
Emitter-Base Voltage (IC = 0)
7
V
IC
Collector Current
12
A
ICM
Collector Peak Current (tp < 5 ms)
25
A
IB
Base Current
7
A
Ptot
Total Dissipation at Tc = 25
55
W
Visol
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
2500
V
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150



Description

The device ST2310DHI is manufactured using DiffusedCollector technology for more stable operation Vsbase drive circuit variations resulting in very lowworst case dissipation.




Parameters:

Technical/Catalog InformationST2310DHI
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)12A
Power - Max55W
DC Current Gain (hFE) (Min) @ Ic, Vce50.5 @ 7A, 5V
Vce Saturation (Max) @ Ib, Ic3V @ 1.75A, 7A
Frequency - Transition-
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseISOWATT-218-3
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names ST2310DHI
ST2310DHI



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