ST39VF200A

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . -0.5V to V_DD + 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . .   -1.0V to V_DD + 1.0V
Voltage on A₉ Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . .. . -0.5V to 13.2V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . .. . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current¹ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . 50 mA

1. Outputs shorted for no more than one second. No more than one output shorted at a time.

The SST39LF200A/400A/800A and SST39VF200A/400A/ 800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

Featuring high performance Word-Program, the SST39LF200A/400A/800A and SST39VF200A/400A/ 800A devices provide a typical Word-Program time of 14 sec. The devices use Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, they have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years.

The SST39LF200A/400A/800A and SST39VF200A/400A/ 800A devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. When programming a flash device, the total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.

The SST39LF200A/400A/800A and SST39VF200A/400A/ 800A SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.

To meet surface mount requirements, the SST39LF200A/ 400A/800A and SST39VF200A/400A/800A are offered in both 48-lead TSOP packages and 48-ball TFBGA packages. See Figures 1 and 2 for pinouts.