Features: Memories 48 to 60K dual voltage High Density Flash (HDFlash) or ROM with read-out protection capability. In-Application Programming andIn-Circuit Programming for HDFlash devices 1.5 to 2K bytes RAM HDFlash endurance: 100 cycles, data retention: 20 years at 55°CClock, Reset And Supply Man...
ST72321J: Features: Memories 48 to 60K dual voltage High Density Flash (HDFlash) or ROM with read-out protection capability. In-Application Programming andIn-Circuit Programming for HDFlash devices 1.5 to 2K ...
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| Voltage Characteristics | |||
| Symbol | Ratings | Maximum value | Unit |
| VDD - VSS | Supply voltage | 6.5 | V |
| VPP - VSS | Programming Voltage | 13 | |
| VIN1) & 2) | Input Voltage on true open drain pin | VSS-0.3 to 6.5 | |
| Input voltage on any other pin | VSS-0.3 to VDD+0.3 | ||
| |∆VDDx|and|∆VSSx| | Variations between different digital power pins | 50 | mV |
| |VSSA - VSSx| | Variations between digital and analog ground pins |
50 | |
| VESD(HBM) | Electro-static discharge voltage (Human Body Model) | ||
| VESD(MM) | Electro-static discharge voltage (Machine Model) |
||
| Current Characteristics | ||||
| Symbol |
Ratings | Maximum value | Unit | |
| IVDD | Total current into VDD power lines(source) 3) |
150 | mA | |
| IVSS | Total current out of VSS ground lines(sink) for 3) |
150 | mA | |
| IIO | Output current sunk by any standard I/O and control pin |
25 | mA | |
| Output current sunk by any high sink I/O pin | 50 | |||
| Output current source by any I/Os and control pin | - 25 | |||
| IINJ(PIN)2) & 4) | Injected current on VPP pin | ± 5 | ||
| Injected current on RESETpin | ± 2 | |||
| Injected current on OSC1 and OSC2 pins | ± 5 | |||
| Injected current on any other pin 5) & 6) | ± 5 | |||
| IINJ( 2) | Total injected current (sum of all I/O and control pins) 5) | ± 25 | ||
| Thermal Characteristics | |||
| Symbol |
Ratings | Value | Unit |
| TSTG | Storage temperature range | -65 to +150 | °C |
| TJ | Maximum junction temperature | ||