Features: • COMPRESSION POINT P1dB=19dBm @ 1.8GHz• TRANSITION FREQUENCY 42GHz• HIGH LINEARITY• ULTRA MINIATURE SOT343(SC70) PACKAGEApplication• LNA FOR GSM/DCS, DECT, PCS, PCN, CDMA, W-CDMA• PREDRIVER FOR DECT• GENERAL PURPOSE 500MHz-5GHzPinoutSpecificatio...
START450: Features: • COMPRESSION POINT P1dB=19dBm @ 1.8GHz• TRANSITION FREQUENCY 42GHz• HIGH LINEARITY• ULTRA MINIATURE SOT343(SC70) PACKAGEApplication• LNA FOR GSM/DCS, DECT, P...
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|
Symbol |
Characteristic |
Ratings |
Unit |
| Vceo | Collector-Emitter voltage |
4.5 |
V |
| Vcbo | Collector-Base Voltage |
15 |
V |
| Vebo | Emitter-Base Voltage |
1.5 |
V |
| Ic | Collector Current |
100 |
mA |
| Ib | Base current |
10 |
mA |
| Ptot | Total dissipation, Ts = TBD |
450 |
mW |
| Tstg | Storage temperature | -65 to 150 | |
| Tj | Max. operating junction temperature |
150 |
|
| Rthjs | Thermal Resistance Junction soldering point |
120 |
/W |
The START450 is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo).
It offers performance level only archived with GaAs products before.