START499TR

Configuration : Single
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Packaging : Reel
Emitter- Base Voltage VEBO : 1.5 V
Collector- Emitter Voltage VCEO Max : 4.5 V
Power Dissipation : 600 mW
Package / Case : SOT-323-4
Maximum Operating Frequency : 42000 MHz
Continuous Collector Current : 600 mA


Pinout




Description

The START499TR is a product of the START family that provide the market with a Si state-of-art RF process. Manufactured in St 3rd generation bipolar process, it offers the highest power, gain and efficiency in SOT343 for given breakdown voltage (BVceo). Suitable for a wide range of applications up to 5GHz, it shows a performance level achieved before with GaAs products only.

The features of START499TR are: (1)high efficiency; (2)high gain; (3)linear and non linear operation; (4)transition frequency 42GHz; (5)ultra miniature SOT343 (SC70) package.

The following is about the maximum ratings of START499TR: (1)Collector-Emitter voltage: 4.5 V ; (2)Collector-Base Voltage: 15 V ; (3)Emitter-Base Voltage: 1.5 V ; (4)Collector Current: 600 mA ; (5)Base current: 32 mA ; (6)Total dissipation, Ts = 101: 600 mW ; (7)Storage temperature: -65 to 150 ; (8)Max. operating junction temperature: 150  ; (9)Thermal Resistance Junction soldering point: 150 /W.