Features: • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V• HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V• GOOD RUGGEDNESS BVceo = 4.5V• TRANSITION FREQUENCY 45GHz• ULTRA MINIATURE SOT343 PACKAGEApplication• LNA FOR GSM/DCS, DECT, PDC, PCS, PCN, CDMA, W-CDMAR...
START540: Features: • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V• HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V• GOOD RUGGEDNESS BVceo = 4.5V• TRANSITION FREQUENCY 45GHz• ULT...
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|
Symbol |
Characteristic |
Ratings |
Unit |
| Vceo | Collector-Emitter voltage |
4.5 |
V |
| Vcbo | Collector-Base Voltage |
15 |
V |
| Vebo | Emitter-Base Voltage |
1.5 |
V |
| Ic | Collector Current |
40 |
mA |
| Ib | Base current |
4 |
mA |
| Ptot | Total dissipation, Ts = 101 |
180 |
mW |
| Tstg | Storage temperature | -65 to 150 | |
| Tj | Max. operating junction temperature |
150 |
|
| Rthjs | Thermal Resistance Junction soldering point |
270 |
/W |
The START540 is a member of the START family that provide the market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the highest linearity with excellent Noise Figure for 4.5V breakdown voltage(BVceo).
It reaches performance level only achieved with GaAs products before.