START540

Features: • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V• HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V• GOOD RUGGEDNESS BVceo = 4.5V• TRANSITION FREQUENCY 45GHz• ULTRA MINIATURE SOT343 PACKAGEApplication• LNA FOR GSM/DCS, DECT, PDC, PCS, PCN, CDMA, W-CDMAR...

product image

START540 Picture
SeekIC No. : 004507050 Detail

START540: Features: • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V• HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V• GOOD RUGGEDNESS BVceo = 4.5V• TRANSITION FREQUENCY 45GHz• ULT...

floor Price/Ceiling Price

Part Number:
START540
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V
• HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V
• GOOD RUGGEDNESS BVceo = 4.5V
• TRANSITION FREQUENCY 45GHz
• ULTRA MINIATURE SOT343 PACKAGE



Application

• LNA FOR GSM/DCS, DECT, PDC, PCS, PCN, CDMA, W-CDMA
• GENERAL PURPOSE 500MHz-5GHz



Pinout

  Connection Diagram


Specifications

Symbol
Characteristic
Ratings
Unit
Vceo Collector-Emitter voltage
4.5
V
Vcbo Collector-Base Voltage
15
V
Vebo Emitter-Base Voltage
1.5
V
Ic Collector Current
40
mA
Ib Base current
4
mA
Ptot Total dissipation, Ts = 101
180
mW
Tstg Storage temperature -65 to 150
Tj Max. operating junction temperature
150
Rthjs Thermal Resistance Junction soldering point
270
/W



Description

The START540 is a member of the START family that provide the market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the highest linearity with excellent Noise Figure for 4.5V breakdown voltage(BVceo).

It reaches performance level only achieved with GaAs products before.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
Industrial Controls, Meters
Isolators
Optoelectronics
View more