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STB200N4F3

MOSFET N-Ch, 40V-0.0035ohms 120A

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SeekIC No. : 00161877 Detail

STB200N4F3: MOSFET N-Ch, 40V-0.0035ohms 120A

STB200N4F3 Data Sheet

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Part Number:
STB200N4F3
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 120 A
Resistance Drain-Source RDS (on) : 0.0031 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 120 A
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 40 V
Resistance Drain-Source RDS (on) : 0.0031 Ohms


Parameters:

Technical/Catalog InformationSTB200N4F3
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs4 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 5100pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs75nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB200N4F3
STB200N4F3



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