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STB30NE06L

Features: *TYPICAL RDS(on) = 0.035 * 100% AVALANCHE TESTED* LOW GATE CHARGE 100 * APPLICATIONORIENTED CHARACTERIZATION* FOR THROUGH-HOLE VERSION CONTACT SALES OFFICEApplication*DC MOTOR CONTROL* DC-DC & DC-AC CONVERTERS* SYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Un...

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STB30NE06L: Features: *TYPICAL RDS(on) = 0.035 * 100% AVALANCHE TESTED* LOW GATE CHARGE 100 * APPLICATIONORIENTED CHARACTERIZATION* FOR THROUGH-HOLE VERSION CONTACT SALES OFFICEApplication*DC MOTOR CONTROL* DC-...

STB30NE06L Data Sheet

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Part Number:
STB30NE06L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* TYPICAL RDS(on) = 0.035
* 100% AVALANCHE TESTED
* LOW GATE CHARGE 100
* APPLICATIONORIENTED
   CHARACTERIZATION
* FOR THROUGH-HOLE VERSION CONTACT
   SALES OFFICE


Application

* DC MOTOR CONTROL
* DC-DC & DC-AC CONVERTERS
* SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 kW 60 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 30 A
ID Drain Current (continuous) at Tc = 100 21 A
IDM(•) Drain Current (pulsed) 120 A
Ptot Total Dissipation at Tc = 25 80 W
  Derating Factor 0.53 W/
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This Power Mosfet STB30NE06L is the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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