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STB30NF10

ApplicationHIGH-EFFICIENCY DC-DC CONVERTERSUPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit STP10NK80Z STP10NK80ZFP VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 k) 100 V VGS Gate-Source Vo...

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SeekIC No. : 004507146 Detail

STB30NF10: ApplicationHIGH-EFFICIENCY DC-DC CONVERTERSUPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit STP10NK80Z STP10NK80ZFP VDS Drain-source Voltage (VGS =...

STB30NF10 Data Sheet

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Part Number:
STB30NF10
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Application

 HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL


Specifications

Symbol
Parameter
Value
Unit
STP10NK80Z
STP10NK80ZFP
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20 k)
100
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
35
18
A
ID

Drain Current (continuous) at Tc = 100
25
13
A
IDM(`)
Drain Current (pulsed)
140
72
A
PTOT
Total Dissipation at Tc = 25
115
30
W
Derating Factor
0.77
0.2
W/
dv/dt (1)
Peak Diode Recovery voltage slope
28
V/ns
EAS (2)
Single Pulse Avalanche Energy
275
MJ
VISO
Insulation Withstand Voltage (DC)
2000
V
Tstg
Storage Temperature
-55 to 175

Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1)ISD30A, di/dt400A/µs, VDD(BR)DSS, Tj TJMAX
2) Starting Tj = 25 oC, ID = 15A, VDD= 30V


Description

This STB30NF10 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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