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STB35NF10

ApplicationHIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 k) 100 V VGS Gate-Source Voltage ± 20 V ID Dr...

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SeekIC No. : 004507149 Detail

STB35NF10: ApplicationHIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-...

STB35NF10 Data Sheet

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Part Number:
STB35NF10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Application

HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20 k)
100
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
40
A
ID Drain Current (continuous) at Tc = 100 28 A
IDM(`)
Drain Current (pulsed)
160
A
PTOT
Total Dissipation at Tc = 25
115
W
Derating Factor
0.77
W/
EAS (2)
Gate source ESD(HBM-C=100pF, R=1.5KW)
200
mJ
dv/dt (1)
Peak Diode Recovery voltage slope
13
V/ns
Tstg
Storage Temperature
-55 to 150
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1)ISD35A, di/dt 300A/µs, VDD32V(, Tj TJMAX
(2) Starting Tj = 25 , ID = 20A, VDD = 80V


Description

This STB35NF10 Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.




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