Features: ` TYPICAL RDS(on) = 0.032 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATION ORIENTED CHARACTERIZATION` SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 )Application· POWER TOOLS· AUTOMOTIVE ENVIRONMENTSpecifications Symbol Param...
STB36NF06L: Features: ` TYPICAL RDS(on) = 0.032 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATION ORIENTED CHARACTERIZATION` SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REE...
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|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
60 |
V |
|
VGS |
Gate- source Voltage |
±18 |
V |
|
ID |
Drain Current (continuos) at TC = 25 |
30 |
A |
|
ID |
Drain Current (continuos) at TC = 100 |
21 |
A |
|
IDM (`) |
Drain Current (pulsed) |
120 |
A |
|
Ptot |
Total Dissipation at TC = 25 |
70 |
mW |
| Derating Factor |
0.47 |
W/ | |
| dv/dt(1) | Peak Diode Recovery voltage slope |
10 |
V/ns |
|
EAS (2) |
Single Pulse Avalanche Energy |
235 |
mJ |
|
Tstg |
Storage Temperature |
-55 to 175 |
|
|
Tj |
Max. Operating Junction Temperature |
This Power MOSFET STB36NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.