STB3NC90Z-1

Application

SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
WELDING EQUIPMENT


Specifications

Symbol	Parameter	Value		Unit
		STP(B)3NC90Z(-1)	STP3NC90ZFP
VDS	Drain-source Voltage (VGS =0)	900		V
VDGR	Drain-gate Voltage (RGS =20kΩ)	900		V
VGS	Gate- source Voltage	± 25		V
ID	Drain Current (continuous) at TC = 25°C	3.5	3.5 (*)	A
ID	Drain Current (continuous) at TC =100°C	2.2	2.2 (*)	A
IDM (· )	Drain Current (pulsed)	14	14 (*)	A
PTOT	Total Dissipation at TC = 25°C	100	35	W
	Derating Factor	0.8	0.28	W/°C
IGS	Gate-source Current (*)	±50		mA
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=15KΩ)	2.5		V
dv/dt	Peak Diode Recovery voltage slope	3		V/ns
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg	Storage Temperature	-65to150		°C
Tj	Operating Junction Temperature	150		°C

Description

The STB3NC90Z-1 third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such ar-rangement gives extra ESD capability with higher rug-gedness performance as requested by a large variety of single-switch applications.