STB3NC90Z

Application

SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
WELDING EQUIPMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS =0)	900	V
VDGR	Drain-gate Voltage (RGS =20kΩ)	900	V
VGS	Gate- source Voltage	± 25	V
ID	Drain Current (continuous) at TC = 25°C	3.5	A
ID	Drain Current (continuous) at TC =100°C	2.2	A
IDM ( ·)	Drain Current (pulsed)	14	A
PTOT	Total Dissipation at TC = 25°C	100	W
	Derating Factor	0.8	W/°C
IGS	Gate-source Current (*)	±50	mA
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=15KΩ)	2.5	KV
dv/dt	Peak Diode Recovery voltage slope	3	V/ns
Tstg	Storage Temperature	-65to150	°C
Tj	Operating Junction Temperature	150	°C

Description

The third generation of MESH OVERLAY™ Power MOSFETs STB3NC90Z for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such ar-rangement gives extra ESD capability with higher rug-gedness performance as requested by a large variety of single-switch applications.