STB40NF10L

Features: TYPICAL RDS(on) = 0.028WEXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTEDAPPLICATION ORIENTED CHARACTERIZATIONADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplicationHIGH-EFFICIENCY DC-DC CONVERTERSUPS AND MOTOR CONTROLAUTOMOTIVESpecifications Symbol Parameter Value Un...

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SeekIC No. : 004507163 Detail

STB40NF10L: Features: TYPICAL RDS(on) = 0.028WEXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTEDAPPLICATION ORIENTED CHARACTERIZATIONADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplicationHIGH-EFFICIENCY DC-...

floor Price/Ceiling Price

Part Number:
STB40NF10L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/16

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.028W
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED CHARACTERIZATION
ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL



Application

 HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
AUTOMOTIVE



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20 k)
100
V
VGS
Gate-source Voltage
±15
V
ID
Drain Current (continuous) at Tc = 25
40
A
ID
Drain Current (continuous) at Tc = 100
25
A
IDM(•)
Drain Current (pulsed)
160
A
PTOT
Total Dissipation at Tc = 25
150
W
Derating Factor
1
W/
EAS(1)
Single Pulse Avalanche Energy
430
mJ
Tstg
Storage Temperature
-65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
(l) Pulse width limited by safe operating area   (1) Starting Tj = 25°C, ID = 20A, VDD = 40V


Description

This PSTB40NF10L ower Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.




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