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STB40NS15

Features: TYPICAL RDS(on) = 0.042EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCESGATE CHARGE MINIMIZEDApplicationHIGH CURRENT SWITCHINGUNINTERRUPTIBLE POWER SUPPLY (UPS)PRIMARYSWITCH IN ISOLATED DC-DC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Dra...

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SeekIC No. : 004507164 Detail

STB40NS15: Features: TYPICAL RDS(on) = 0.042EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCESGATE CHARGE MINIMIZEDApplicationHIGH CURRENT SWITCHINGUNINTERRUPTIBLE POWER SUPPLY (UPS)PRIMARYSWITCH ...

STB40NS15 Data Sheet

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Part Number:
STB40NS15
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.042
 EXTREMELY HIGH dv/dt CAPABILITY
  VERY LOW INTRINSIC CAPACITANCES
 GATE CHARGE MINIMIZED


Application

 HIGH CURRENT SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS)
PRIMARYSWITCH IN ISOLATED DC-DC CONVERTERS


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
150
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
150
V
VGS
 Gate-source Voltage
±20
V
ID
 Drain Current (continuous) at Tc = 25
40
A
ID
 Drain Current (continuous) at Tc = 100
25
A
IDM(•)
 Drain Current (pulsed)
160
A
PTOT
 Total Dissipation at Tc = 25
140
W
 Derating Factor
0.933
W/
EAS(1)
 Single Pulse Avalanche Energy
9
V/ns
Tstg
 Storage Temperature
-65 to 175
°C
Tj
 Max. Operating Junction Temperature
175
°C
(l) Pulse width limited by safe operating area


Description

This STB40NS15 powermos MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.




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