Features: `TYPICAL RDS(on) = 0.028 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE AVALANCHE DATA AT 100oC`LOW INPUT CAPACITANCE`LOW GATE CHARGE`LOW LEAKAGE CURRENT`APPLICATION ORIENTED CHARACTERIZATION`THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX -1 )`SURFACE-MOUNTING ...
STB45N10L: Features: `TYPICAL RDS(on) = 0.028 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE AVALANCHE DATA AT 100oC`LOW INPUT CAPACITANCE`LOW GATE CHARGE`LOW LEAKAGE CURRENT`APPLICATION ORIENTE...
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| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 100 | V |
| VDGR | Drain- gate Voltage (RGS = 20 k) | 100 | V |
| VGS | Gate-source Voltage | ± 15 | V |
| ID | Drain Current (continuous) at Tc = 25 | 45 | A |
| ID | Drain Current (continuous) at Tc = 100 | 32 | A |
| IDM(`) | Drain Current (pulsed) | 180 | A |
| Ptot | Total Dissipation at Tc = 25 | 150 | W |
| Derating Factor | 1 | W/ | |
| Tstg | Storage Temperature | -65 to 175 | |
| Tj | Max. Operating Junction Temperature | 175 |