STB45NF06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 38 A
Resistance Drain-Source RDS (on) : 0.028 Ohms


Application

 HIGH-EFFICIENCY DC-DC CONVERTERS
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	60	V
VDGR	Drain-gate Voltage (RGS = 20 k)	60	V
VGS	Gate- source Voltage	±20	V
ID	Drain Current (continuos) at TC = 25°C	38	A
ID	Drain Current (continuos) at TC = 100°C	26	A
IDM ()	Drain Current (pulsed)	152	A
PTOT	Total Dissipation at TC = 25°C	80	W
	Derating Factor	0.53	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	7	V/ns
Tstg	Storage Temperature	65 to 175	°C
Tj	Max. Operating Junction Temperature	175	°C

Description

This Power Mosfet STB45NF06 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STB45NF06
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	38A
Rds On (Max) @ Id, Vgs	28 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds	980pF @ 25V
Power - Max	80W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	58nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB45NF06 STB45NF06 497 5731 2 ND 49757312ND 497-5731-2