Application· SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERSSpecifications Symbol Parameter Value Unit TO-220/D2PAK TO-220FP VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kW) 30 V VGS Gat...
STB45NF3LL: Application· SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERSSpecifications Symbol Parameter Value Unit TO-220/D2PAK TO-220FP VDS Drain-sour...
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ApplicationHIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLI...
ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIF...
| Symbol | Parameter |
Value |
Unit | |
|
TO-220/D2PAK |
TO-220FP |
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
30 |
V | |
|
VGS |
Gate- source Voltage |
± 16 |
V | |
|
ID |
Drain Current (continuous) at TC = 25°C |
45 |
27 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
32 |
19 |
A |
|
IDM (·) |
Drain Current (pulsed) |
180 |
108 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
70 |
25 |
W |
| Derating Factor |
0.46 |
0.167 |
W/°C | |
|
EAS (1) |
Single Pulse Avalanche Energy |
241 |
mJ | |
|
Viso |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
|
Tstg |
Storage Temperature |
55 to 175 |
°C | |
|
Tj |
Max. Operating Junction Temperature | |||
This application specific Power MOSFET STB45NF3LL is the third genaration of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.