STB45NF3LL

Application· SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERSSpecifications Symbol Parameter Value Unit TO-220/D2PAK TO-220FP VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kW) 30 V VGS Gat...

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SeekIC No. : 004507170 Detail

STB45NF3LL: Application· SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERSSpecifications Symbol Parameter Value Unit TO-220/D2PAK TO-220FP VDS Drain-sour...

floor Price/Ceiling Price

Part Number:
STB45NF3LL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Application

· SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS


Specifications

Symbol Parameter
Value
Unit
   
TO-220/D2PAK
TO-220FP
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kW)
30
V
VGS
Gate- source Voltage
± 16
V
ID
Drain Current (continuous) at TC = 25°C
45
27
A
ID
Drain Current (continuous) at TC = 100°C
32
19
A
IDM (·)
Drain Current (pulsed)
180
108
A
PTOT
Total Dissipation at TC = 25°C
70
25
W
Derating Factor
0.46
0.167
W/°C
EAS (1)
Single Pulse Avalanche Energy
241
mJ
Viso
Insulation Withstand Voltage (DC)
-
2500
V
Tstg
Storage Temperature
55 to 175
°C
Tj
Max. Operating Junction Temperature



Description

This application specific Power MOSFET STB45NF3LL is the third genaration of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.




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