Position: Home  > All Categories> Integrated Circuits (ICs) > STB4NB50

STB4NB50

Features: TYPE VDSS RDS(on) ID STB4NB50 500 V < 2.8 3.8 A` TYPICAL RDS(on) = 2.5 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH MODE POWER SUPPL...

product image

STB4NB50 Picture
See larger image
SeekIC No. : 004507171 Detail

STB4NB50: Features: TYPE VDSS RDS(on) ID STB4NB50 500 V < 2.8 3.8 A` TYPICAL RDS(on) = 2.5 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACIT...

STB4NB50 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB4NB50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2026/1/16

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

TYPE
VDSS
RDS(on)
ID
STB4NB50
500 V
< 2.8
3.8 A

` TYPICAL RDS(on) = 2.5
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol
Parameter
FQP2NA90
Units
VDS
 Drain-source Voltage (VGS = 0)
500
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
500
V
VGS
 Gate-source Voltage
±30
V
ID
 Drain Current (continuous) at Tc = 25
3.8
A
ID
 Drain Current (continuous) at Tc = 100
2.4
A
IDM(•)
 Drain Current (pulsed)
15.2
A
Ptot
 Total Dissipation at Tc = 25
80
W
 Derating Factor
0.64
W/
dv/dt (1)
 Peak Diode Recovery voltage slope
4.5
V/ns
Tstg
 Storage Temperature
-65 to +150
Tj
 Max. Operating Junction Temperature
300

(`) Pulse width limited by safe operating area     (1) ISD 4 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX


Description

Using the latest high voltage MESH OVERLAYÔ process, STB4NB50 STMicroelectronics has designed an  advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tools
TCP202
G084SN05 V.3
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Crystals and Oscillators
WT325BI0030.000000
2SB49
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Tapes, Adhesives
803
AC452-2
View more