STB4NB80

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 4 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

TYPE	VDSS	RDS(on)	ID
STB4NB80	800 V	3.3	4 A

` TYPICAL RDS(on) = 3
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value	Units
VDSS	Drain-Source Voltage	800	V
VDGR	Drain- gate Voltage (RGS = 20 k)	800	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	4	A
ID	Drain Current (continuous) at Tc = 100	2.4	A
IDM(•)	Drain Current (pulsed)	16	A
Ptot	Total Dissipation at Tc = 25	100	W
	Derat ing Factor	1	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
VISO	Insulat ion Withstand Voltage (DC)	-	V
Tstg	Storage Temperature	-65 to +150
Tj	Max. Operating Junction Temperature	150

(`) Pulse width limited by safe operating area

(1) I_SD4 A, di/dt 200 A/s, V_DD V_(BR)DSS, Tj T_JMAX


Description

Using the latest high voltage MESH OVERLAYÔ process, STB4NB80 SGS-Thomson has designed an  advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's poprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.