Features: TYPE VDSS RDS(on) ID STB4NB80FP 800 V 3.3 4 A` TYPICAL RDS(on) = 3 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING· SWITCH MODE POWER SUPPLIES (SM...
STB4NB80FP: Features: TYPE VDSS RDS(on) ID STB4NB80FP 800 V 3.3 4 A` TYPICAL RDS(on) = 3 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` ...
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ApplicationHIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLI...
ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIF...
TYPE |
VDSS |
RDS(on) |
ID |
STB4NB80FP |
800 V |
3.3 |
4 A |
Symbol |
Parameter |
Value |
Units |
VDSS |
Drain-Source Voltage |
800 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 |
V |
VGS |
Gate-source Voltage |
±30 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
4(*) |
A |
ID |
Drain Current (continuous) at Tc = 100 |
2.4(*) |
A |
IDM(•) |
Drain Current (pulsed) |
16 |
A |
Ptot |
Total Dissipation at Tc = 25 |
35 |
W |
Derat ing Factor |
0.28 |
W/ | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
VISO |
Insulat ion Withstand Voltage (DC) |
2000 |
V |
Ts tg |
Storage Temperature |
-65 to +150 |
|
Tj |
Max. Operating Junction Temperature |
150 |
Using the latest high voltage MESH OVERLAYÔ process, STB4NB80FP SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's poprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.