STB4NC80Z

Application

SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
WELDING EQUIPMENT


Specifications

Symbol	Parameter	Value		Unit
		STP(B)4NC80Z(-1)	STP4NC80ZFP
VDS	Drain-source Voltage (VGS =0)	800		V
VDGR	Drain-gate Voltage (RGS =20kΩ)	800		V
VGS	Gate- source Voltage	±25		V
ID	Drain Current (continuous) at TC = 25°C	4	4(*)	A
ID	Drain Current (continuous) at TC =100°C	2.5	2.5 (*)	A
IDM (· )	Drain Current (pulsed)	16	16 (*)	A
PTOT	Total Dissipation at TC = 25°C	100	35	W
	Derating Factor	0.8	0.28	W/°C
IGS	Gate-source Current	±50		mA
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=15KΩ)	2.5		KV
dv/dt(1)	Peak Diode Recovery voltage slope	3		V/ns
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg	Storage Temperature	-65to150		°C
Tj	Operating Junction Temperature	150		°C

Description

The STB4NC80Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur-passed on-resistance per unit area while integrat-ing back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capa-bility with higher ruggedness performance as re-quested by a large variety of single-switch applications.