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STB55NE06

MOSFET N-Ch 60 Volt 55 Amp

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SeekIC No. : 00165547 Detail

STB55NE06: MOSFET N-Ch 60 Volt 55 Amp

STB55NE06 Data Sheet

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Part Number:
STB55NE06
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : TO-263
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.022 Ohms
Continuous Drain Current : 55 A


Features:

` TYPICAL RDS(on) = 0.019
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` LOW GATE CHARGE 100 oC
` HIGH dv/dt CAPABILITY
` APPLICATION ORIENTED CHARACTERIZATION
` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE


Application

·DC MOTOR CONTROL
·DC-DC & DC-AC CONVERTERS
·SYNCHRONOUS RECTIFICATION


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 k) 60 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 55 A
ID Drain Current (continuous) at Tc = 100 39 A
IDM(•) Drain Current (pulsed) 220 A
Ptot Total Dissipation at Tc = 25 130 W
  Derating Factor 0.96 W/
dv/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This Power Mosfet STB55NE06 is the latest development of SGS-THOMSON unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.




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