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STB55NE06L

Features: *TYPICAL RDS(on) = 0.018 * EXCEPTIONAL dv/dt CAPABILITY* 100% AVALANCHE TESTED* LOW GATE CHARGE 100 * APPLICATION ORIENTED CHARACTERIZATION* FOR THROUGH-HOLE VERSION CONTACT SALES OFFICEApplication*HIGH CURRENT, HIGH SPEED SWITCHING* SOLENOID AND RELAY DRIVERS* MOTOR CONTROL, AUDIO AMPLI...

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SeekIC No. : 004507183 Detail

STB55NE06L: Features: *TYPICAL RDS(on) = 0.018 * EXCEPTIONAL dv/dt CAPABILITY* 100% AVALANCHE TESTED* LOW GATE CHARGE 100 * APPLICATION ORIENTED CHARACTERIZATION* FOR THROUGH-HOLE VERSION CONTACT SALES OFFICEAp...

STB55NE06L Data Sheet

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Part Number:
STB55NE06L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

* TYPICAL RDS(on) = 0.018
* EXCEPTIONAL dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* LOW GATE CHARGE 100
* APPLICATION ORIENTED
   CHARACTERIZATION
* FOR THROUGH-HOLE VERSION CONTACT
   SALES OFFICE


Application

* HIGH CURRENT, HIGH SPEED SWITCHING
* SOLENOID AND RELAY DRIVERS
* MOTOR CONTROL, AUDIO AMPLIFIERS
* DC-DC & DC-AC CONVERTERS
* AUTOMOTIVE ENVIRONMENT (INJECTION,
   ABS, AIR-BAG, LAMPDRIVERS, Etc. )


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 k) 60 V
VGS Gate-source Voltage ± 15 V
ID Drain Current (continuous) at Tc = 25 55 A
ID Drain Current (continuous) at Tc = 100 39 A
IDM(•) Drain Current (pulsed) 220 A
Ptot Total Dissipation at Tc = 25 130 W
  Derating Factor 0.83 W/
dv/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This Power Mosfet STB55NE06L is the latest development of SGS-THOMSON unique "Single Feature SizeÔ" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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