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STB55NF03L

ApplicationLOW VOLTAGE DC-DC CONVERTERS HIGH CURRENT, HIGH SWITCHING SPEED HIGH EFFICIENCY SWITCHING CIRCUITSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 k) 30 V VGS Gate- source V...

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SeekIC No. : 004507184 Detail

STB55NF03L: ApplicationLOW VOLTAGE DC-DC CONVERTERS HIGH CURRENT, HIGH SWITCHING SPEED HIGH EFFICIENCY SWITCHING CIRCUITSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage...

STB55NF03L Data Sheet

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Part Number:
STB55NF03L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

LOW VOLTAGE DC-DC CONVERTERS
HIGH CURRENT, HIGH SWITCHING SPEED
HIGH EFFICIENCY SWITCHING CIRCUITS


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 k)
30
V
VGS
Gate- source Voltage
±16
V
ID
Drain Current (continuos) at TC = 25°C
55
A
ID
Drain Current (continuos) at TC = 100°C
39
A
IDM (l)
Drain Current (pulsed)
220
A
PTOT
Total Dissipation at TC = 25°C
80
W
 
Derating Factor
0.53
W/°C
Tstg
Storage Temperature
65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C



Description

This Power MOSFET STB55NF03L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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