STB55NF06-1

ApplicationHIGH CURRENT, HIGH SWITCHING SPEEDMOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERSAUTOMOTIVESpecifications Symbol Parameter Value Unit STP_B55NF06(-1) STP55NF06FP VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS =...

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SeekIC No. : 004507187 Detail

STB55NF06-1: ApplicationHIGH CURRENT, HIGH SWITCHING SPEEDMOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERSAUTOMOTIVESpecifications Symbol Parameter Value Unit STP_B55NF06(-1) ...

floor Price/Ceiling Price

Part Number:
STB55NF06-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Application

 HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE



Specifications

Symbol
Parameter
Value
Unit
STP_B55NF06(-1)
STP55NF06FP
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain-gate Voltage (RGS = 20 k)
60
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuos) at TC = 25°C
50
50(*)
A
ID
Drain Current (continuos) at TC = 100°C
35
35(*)
A
IDM ()
Drain Current (pulsed)
200
200(*)
A
PTOT
Total Dissipation at TC = 25°C
110
30
W
 
Derating Factor
0.73
0.2
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
7
V/ns
EAS (2)
Single Pulse Avalanche Energy
350
mJ
Tstg
Storage Temperature
-55 to 175
°C
Tj
Operating Junction Temperature



Description

This Power MOSFET STB55NF06-1 is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.




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