STB5NC70Z

Application

SINGLE-ENDED SMPS IN MONITORS,COMPUTER AND INDUSTRIAL APPLICATION
WELDING EQUIPMENT


Specifications

Symbol	Parameter	Value		Unit
		STP(B)5NC70Z(-1)	STP5NC70ZFP
VDS	Drain-source Voltage (VGS =0)	700		V
VDGR	Drain-gate Voltage (RGS =20kΩ)	700		V
VGS	Gate- source Voltage	±25		V
ID	Drain Current (continuous) at TC = 25°C	4.6	4.6(*)	A
ID	Drain Current (continuous) at TC =100°C	2.9	2.9 (*)	A
IDM (· )	Drain Current (pulsed)	18.4	18.4 (*)	A
PTOT	Total Dissipation at TC = 25°C	100	35	W
	Derating Factor	0.8	0.32	W/°C
IGS	Gate-source Current	±50		mA
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=15KΩ)	3		KV
dv/dt(1)	Peak Diode Recovery voltage slope	3		V/ns
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg	Storage Temperature	-65to150		°C
Tj	Operating Junction Temperature	150		°C

Description

The STB5NC70Z third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.