STB5NK50Z-1

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Package / Case : I2PAK
Continuous Drain Current : 4.4 A


Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		STP5NK50Z STB5NK50Z-1	STP5NK50ZFP	STD5NK50Z STD5NK50Z-1
VDS	Drain-source Voltage (VGS =0)	500			V
VDGR	Drain-gate Voltage (RGS =20kΩ)	500			V
VGS	Gate- source Voltage	± 30			V
ID	Drain Current (continuous) at TC = 25°C	4.4	4.4 (*)	4.4 (*)	A
ID	Drain Current (continuous) at TC =100°C	2.7	2.7 (*)	2.7 (*)	A
IDM (· )	Drain Current (pulsed)	17.6	17.6 (*)	17.6 (*)	A
PTOT	Total Dissipation at TC = 25°C	70	25	70	W
	Derating Factor	0.56	0.2	0.56	W/°C
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)	3000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)		2500		V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150 -55 to 150			°C

Description

The STB5NK50Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.