STB60NE03L-12 Selling Leads, Price trend, STB60NE03L-12 DataSheet download, circuit diagram from SeekIC.com

ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSDC-DC & DC-AC CONVERTERAUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain- gate Voltage (RGS = 20k) 30 V VGS Gat...

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SeekIC No. : 004507205 Detail

STB60NE03L-12: ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSDC-DC & DC-AC CONVERTERAUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Value Unit VDS Drain-sou...

STB60NE03L-12 Data Sheet

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Part Number:: STB60NE03L-12
Supply Ability:: 5000

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Upload time: 2025/12/23

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Product Details

Description

Application

HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTER
AUTOMOTIVE ENVIRONMENT

Specifications

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	30	V
V_DGR	Drain- gate Voltage (R_GS = 20k)	30	V
V_GS	Gate-source Voltage	± 15	V
I_D	Drain Current (continuous) at T_c = 25 ^oC	60	A
I_D	Drain Current (continuous) at T_c = 100 ^oC	42	A
I_DM(•)	Drain Current (pulsed)	240	A
P_tot	Total Dissipation at T_c = 25 ^oC	120	W
	Derating Factor	0.8	W/^oC
d_{v/dt (1)}	Peak Diode Recovery voltage slope	7	V/ns
T_stg	Storage Temperature	-65 to 175	^oC
T_j	Max. Operating Junction Temperature	175	^oC

Description

This Power MOSFET STB60NE03L-12 is the latest development of STMicroelectronics unique "Single Feature Size^TM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

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