STB60NF03L Selling Leads, Price trend, STB60NF03L DataSheet download, circuit diagram from SeekIC.com

ApplicationLOW VOLTAGEDC-DC CONVERTERS HIGH CURRENT, HIGH SPEED SWITCHINGHIGH EFFICIENCY SWITCHING CIRCUITSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 k) 30 V VGS Gate- source Vol...

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SeekIC No. : 004507208 Detail

STB60NF03L: ApplicationLOW VOLTAGEDC-DC CONVERTERS HIGH CURRENT, HIGH SPEED SWITCHINGHIGH EFFICIENCY SWITCHING CIRCUITSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (...

STB60NF03L Data Sheet

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Part Number:: STB60NF03L
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/12/23

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Recent History
What is this?

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Features: `TYPICAL RDS(on) = 0.0085 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE ...

Product Details

Description

Application

LOW VOLTAGEDC-DC CONVERTERS
HIGH CURRENT, HIGH SPEED SWITCHING
HIGH EFFICIENCY SWITCHING CIRCUITS

Specifications

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	30	V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	30	V
V_GS	Gate- source Voltage	±20	V
I_D	Drain Current (continuos) at T_C = 25°C	60	A
I_D	Drain Current (continuos) at T_C= 100°C	42	A
I_DM()	Drain Current (pulsed)	240	A
P_TOT	Total Dissipation at T_C = 25°C	100	W
	Derating Factor	0.67	W/°C
E_AS(1)	Single Pulse Avalanche Energy	650	V/ns
T_stg	Storage Temperature	65 to 175	°C
T_j	Max. Operating Junction Temperature	175	°C

Description

This STB60NF03L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.

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STB60NF03L

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