ApplicationHIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL AUTOMOTIVESpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 k) 60 V VGS Gate- source Voltage ± 20 V ID...
STB60NF06: ApplicationHIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL AUTOMOTIVESpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR...
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Features: `TYPICAL RDS(on) = 0.0085 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE ...
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
60 |
V |
|
VGS |
Gate- source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuos) at TC = 25°C |
60 |
A |
|
ID |
Drain Current (continuos) at TC = 100°C |
42 |
A |
|
IDM () |
Drain Current (pulsed) |
240 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
110 |
W |
|
Derating Factor |
0.73 |
W/°C | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
|
Tstg |
Storage Temperature |
65 to 175 |
°C |
|
Tj |
Max. Operating Junction Temperature |
175 |
°C |
This STB60NF06 Power Mosfet series realized with STMicroelectronicsunique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.