Features: TYPICAL RDS(on) = 0.019 Ω EXTREMELY HIGHL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 )Application HIGH EFFICIENCY DC/DC CONVERTERS, INDUSTRIAL, AND LIGHTING EQUIPMENT. MOTOR CONTROLSpecifications ...
STB60NF10: Features: TYPICAL RDS(on) = 0.019 Ω EXTREMELY HIGHL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 )Application HIGH ...
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Features: `TYPICAL RDS(on) = 0.0085 `AVALANCHE RUGGED TECHNOLOGY`100% AVALANCHE TESTED`REPETITIVE ...
TYPICAL RDS(on) = 0.019 Ω
EXTREMELY HIGHL dv/dt CAPABILITY
100% AVALANCHE TESTED
SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
HIGH EFFICIENCY DC/DC CONVERTERS, INDUSTRIAL, AND LIGHTING EQUIPMENT.
MOTOR CONTROL
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20k) |
100 |
V |
|
VGS |
Gate-source Voltage |
±20 |
V |
|
ID(*) |
Drain Current (continuous) at Tc = 25 oC |
80 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 oC |
66 |
A |
|
IDM(•) |
Drain Current (pulsed) |
320 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
300 |
W |
| Derating Factor |
2 |
W/oC | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
16 |
V/ns |
|
EAS (2) |
Single Pulse Avalanche Energy |
485 |
mJ |
|
Tstg |
Storage Temperature |
-55 to 175 |
oC |
This STB60NF10 MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.