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STB60NH02LT4

MOSFET N-Ch 24 Volt 60 Amp

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SeekIC No. : 00160613 Detail

STB60NH02LT4: MOSFET N-Ch 24 Volt 60 Amp

STB60NH02LT4 Data Sheet

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Part Number:
STB60NH02LT4
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.0085 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Continuous Drain Current : 60 A
Drain-Source Breakdown Voltage : 24 V
Resistance Drain-Source RDS (on) : 0.0085 Ohms


Features:

` TYPICAL RDS(on) = 0.0085 @ 10 V
` TYPICAL RDS(on) = 0.012 @ 5 V
` RDS(ON) * Qg INDUSTRY's BENCHMARK
` CONDUCTION LOSSES REDUCED
` SWITCHING LOSSES REDUCED
` LOW THRESHOLD DEVICE
` SURFACE-MOUNTING D2PAK (TO-263)
  POWER PACKAGE IN TUBE (NO SUFFIX) OR
  IN TAPE & REEL (SUFFIX "T4"


Application

SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES


Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 24 V
VDGR Drain-gate voltage (RGS = 20 k) 24  
VGS Gate-source voltage ± 20 V
ID(1) Drain current (continuous) at TC = 25°C 60 A
ID(1) Drain current (continuous) at TC = 100°C 43 A
IDM(2) Drain current (pulsed) 240 A
PTOT(3) Total dissipation at TC = 25°C 70 W
  Derating factor 0.47 W/°C
dv/dt Peak diode recovery voltage slope 280 V/ns
EAS Single pulse avalanche energy -55 to 175 mJ
Tj
Tstg		 Operating junction temperature
Storage temperature		 -55 to 175 °C



Description

The STB60NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.




Parameters:

Technical/Catalog InformationSTB60NH02LT4
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs10.5 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 15V
Power - Max70W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs32nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB60NH02LT4
STB60NH02LT4



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