STB6NB50

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Continuous Drain Current : 5.8 A


Features:

TYPE	VDSS	RDS(on)	ID
STB6NB50	500 V	< 1.5	5.8 A

` TYPICAL R<sub>DS(on)</sub> = 1.35
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED



Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES(SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	FQP2NA90	Units
VDS	Drain-source Voltage (VGS = 0)	500	V
VDGR	Drain- gate Voltage (RGS = 20 k)	500	V
VGS	Gate-source Voltage	±30	V
ID	Drain Current (continuous) at Tc = 25	5.8	A
ID	Drain Current (continuous) at Tc = 100	3.7	A
IDM(•)	Drain Current (pulsed)	23.2	A
Ptot	Total Dissipation at Tc = 25	100	W
	Derating Factor	0.8	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
Tstg	Storage Temperature	-55 to +150
Tj	Max. Operating Junction Temperature	300

(•) Pulse width limited by safe operating area


Description

Using the latest high voltage MESH OVERLAY] process, STB6NB50 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the  lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.