STB6NK60Z-1

MOSFET N-Ch, 600V-1ohm Zener SuperMESH 6A

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STB6NK60Z-1 Picture
SeekIC No. : 00159014 Detail

STB6NK60Z-1: MOSFET N-Ch, 600V-1ohm Zener SuperMESH 6A

floor Price/Ceiling Price

US $ .52~.71 / Piece | Get Latest Price
Part Number:
STB6NK60Z-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.71
  • $.59
  • $.55
  • $.52
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 1.2 Ohms


Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
LIGHTING



Specifications

Symbol Parameter Value Unit
STP6NK60Z
STB6NK60Z
STB6NK60Z-1
STP6NK60ZFP  
VDS Drain-source Voltage (VGS =0) 600 V
VDGR Drain-gate Voltage (RGS =20kΩ) 600 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuous) at TC = 25°C 6 6(*) A
ID Drain Current (continuous) at TC =100°C 3.8 3.8 (*) A
IDM (` ) Drain Current (pulsed) 2.4 2.4 (*) A
PTOT Total Dissipation at TC = 25°C 110 32 W
  Derating Factor 0.88 0.24 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ) 3500 KV
dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC)   2000 V

Tstg,Tj

Storage TemperatureOperating Junction Temperature
-65to150
-65to150
°C
°C



Description

The STB6NK60Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.


Parameters:

Technical/Catalog InformationSTB6NK60Z-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 905pF @ 25V
Power - Max110W
PackagingTube
Gate Charge (Qg) @ Vgs46nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB6NK60Z 1
STB6NK60Z1
497 5955 5 ND
49759555ND
497-5955-5



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