STB6NK60Z

Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
LIGHTING


Specifications

Symbol	Parameter	Value		Unit
		STP6NK60Z STB6NK60Z STB6NK60Z-1	STP6NK60ZFP
VDS	Drain-source Voltage (VGS =0)	600		V
VDGR	Drain-gate Voltage (RGS =20kΩ)	600		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuous) at TC = 25°C	6	6(*)	A
ID	Drain Current (continuous) at TC =100°C	3.8	3.8 (*)	A
IDM (` )	Drain Current (pulsed)	2.4	2.4 (*)	A
PTOT	Total Dissipation at TC = 25°C	110	32	W
	Derating Factor	0.88	0.24	W/°C
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=15KΩ)	3500		KV
dv/dt(1)	Peak Diode Recovery voltage slope	4.5		V/ns
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg,Tj	Storage TemperatureOperating Junction Temperature	-65to150 -65to150		°C °C

Description

The STB6NK60Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.