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STB70NF03L

Application SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 k) 30 V VGS Gate- source Voltage ± 18 ...

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SeekIC No. : 004507229 Detail

STB70NF03L: Application SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30...

STB70NF03L Data Sheet

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Part Number:
STB70NF03L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

  SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS




Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 k)
30
V
VGS
Gate- source Voltage
± 18
V
ID(#)
Drain Current (continuous) at TC = 25°C
70
A
ID
Drain Current (continuous) at TC = 100°C
50
A
DM(`)
Drain Current (pulsed)
280
A
Ptot
Total Dissipation at TC = 25°C
100
W
 
Derating Factor
0.67
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
5.5
V/ns
EAS (2)
Single Pulse Avalanche Energy
500
mJ
Tstg
Storage Temperature
-55 to 175
°C
Tj
Operating Junction Temperature



Description

This application specific Power MOSFET STB70NF03L is the third genaration of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.




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